Next-generation memory 1 million times faster than flash memory !
Next-generation flash memory
Conventional flash memory technology has shown the limitations of integration due to the recent miniaturization and high integration, with the disadvantage of slow speed and short life. As 5G technology has been commercialized since 2019, the memory speed of mobile devices is urgently required.
V-memory technology not only overcomes the problems of next-generation nonvolatile memory technologies, but also provides technologies that can raise the limit of integration of existing flash memory process technology.
V-memory’s business pursuits a better life and better environmental protection. We have two main business items: the next-generation high-speed memory device and the high-performance thermoelectric cooling materials/devices.
The research on the next generation semiconductor is recently intensifying globally due to the scaling limit of semiconductor integration. The future technology requires enormous data storage and high processing speed because artificial intelligence (AI), Big data, and the Internet of Things (IoT) are essential in the 4th industrial revolution period. Therefore, the next-generation semiconductor needs higher speed, higher integration, and excellent stability than conventional semiconductors.
V-memory Corp. is a start-up company from a University Lab. in 2018, it commercializes the next-generation memory devices that can overcome the current limitation of semiconductor technologies and deal with future technological needs. V-memory’s proposed semiconductor has a higher speed as much as 1 Million times than current semiconductors with excellent stability. V-memory Corp. has original technology with more than 30 patents. We pursue a global semiconductor company through outstanding semiconductor technology.
We have fundamental patents for thermoelectric materials and devices that show high thermoelectric figure-of-merit zT over a wide temperature range. The state-of-the-art thermoelectric materials can be applied to efficient cooling appliances such as small refrigerators, device cooling, and useful small thermal management system. Even though the current thermoelectric devices’ market remains in a niche market, we believe it can be expanded progressively as a next-generation cooling technology. Our efforts to enhance thermoelectric performance can accelerate the market growth in thermoelectric applications.
We promise to do our best to become a world-class semiconductor company through constant change and growth.
V-memory Corp. CEO J. S. Rhyee
2020 14 patent applications and 4 registrations applications
Oct TIPS Program Selected
Sep Actner Lab 2nd Investment
Jun 2020 Research Foundation Utilization PRJ (Research Intensive)
Jan Moved in Heungdeok IT Valley 605 Office
2019 14 patent applications and 4 registrations, 3 PCT international applications
Jul Establishment of company-affiliated research institute
Jun 2019 Research Foundation Utilization Project PRJ (Research Intensive), Initial Startup Package PRJ
May Excellent Technology Evaluation Company Certification (T-5),
Acquired Technology Guarantee Fund U-Tech Guarantee
Mar Korea Nano Technology Institute-Moved the location of corporation
Fab Venture Business Certification
Jan private investment from University of Ulsan U2A No. 2
2018 10 patent applications
Sep Actner Lab investment
Jul Establishment of V-memory Corp.