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Next-generation memory 1 million times faster than flash memory !
Next-generation flash memory

Conventional flash memory technology has shown the limitations of integration due to the recent miniaturization and high integration, with the disadvantage of slow speed and short life. As 5G technology has been commercialized since 2019, the memory speed of mobile devices is urgently required.

V-memory technology not only overcomes the problems of next-generation nonvolatile memory technologies, but also provides technologies that can raise the limit of integration of existing flash memory process technology.

CEO MASSAGE

V-memory’s business pursuits a better life and better environmental protection. We have two main business items: the next-generation high-speed memory device and the high-performance thermoelectric cooling materials/devices.

The research on the next generation semiconductor is recently intensifying globally due to the scaling limit of semiconductor integration. The future technology requires enormous data storage and high processing speed because artificial intelligence (AI), Big data, and the Internet of Things (IoT) are essential in the 4th industrial revolution period. Therefore, the next-generation semiconductor needs higher speed, higher integration, and excellent stability than conventional semiconductors.

V-memory Corp. is a start-up company from a University Lab. in 2018, it commercializes the next-generation memory devices that can overcome the current limitation of semiconductor technologies and deal with future technological needs. V-memory’s proposed semiconductor has a higher speed as much as 1 Million times than current semiconductors with excellent stability. V-memory Corp. has original technology with more than 30 patents. We pursue a global semiconductor company through outstanding semiconductor technology.

We have fundamental patents for thermoelectric materials and devices that show high thermoelectric figure-of-merit zT over a wide temperature range. The state-of-the-art thermoelectric materials can be applied to efficient cooling appliances such as small refrigerators, device cooling, and useful small thermal management system. Even though the current thermoelectric devices’ market remains in a niche market, we believe it can be expanded progressively as a next-generation cooling technology. Our efforts to enhance thermoelectric performance can accelerate the market growth in thermoelectric applications.

We promise to do our best to become a world-class semiconductor company through constant change and growth.

 

V-memory Corp. CEO  J. S. Rhyee

HISTORY

2020 14 patent applications and 4 registrations applications

Oct   TIPS Program Selected

Sep   Actner Lab 2nd Investment

Jun   2020 Research Foundation Utilization PRJ (Research Intensive)

Jan   Moved in Heungdeok IT Valley 605 Office

2019 14 patent applications and 4 registrations, 3 PCT international applications

Jul   Establishment of company-affiliated research institute

Jun   2019 Research Foundation Utilization Project PRJ (Research Intensive), Initial Startup Package PRJ

May   Excellent Technology Evaluation Company Certification (T-5),

           Acquired Technology Guarantee Fund U-Tech Guarantee

Mar   Korea Nano Technology Institute-Moved the location of corporation

Fab   Venture Business Certification

Jan   private investment from University of Ulsan U2A No. 2

2018 10 patent applications

Sep   Actner Lab investment

Jul   Establishment of V-memory Corp.

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