Next-generation memory 1 million times faster than flash memory !
Next-generation flash memory
Conventional flash memory technology has shown the limitations of integration due to the recent miniaturization and high integration, with the disadvantage of slow speed and short life. As 5G technology has been commercialized since 2019, the memory speed of mobile devices is urgently required.
V-memory technology not only overcomes the problems of next-generation nonvolatile memory technologies, but also provides technologies that can raise the limit of integration of existing flash memory process technology.
Recently, the research on the next generation semiconductor is intensifying globally due to facing with the scaling limitation of semiconductor integration. The future technology requires enormous data storage and high processing speed because the artificial intelligence (AI), Big data, and Internet of Things (IoT) are essential in the 4th industrial revolution period. Therefore, the next-generation semiconductor needs higher speed, higher integration, and excellent stability than those of conventional semiconductors.
V-memory Corp. is a start-up company from a University Lab. in 2018 to commercialize the next-generation memory devices that can overcome the current limitation of semiconductor technologies and can deal with future technological needs. The proposed semiconductor of V-memory has a higher speed as much as 1 Million times than current semiconductors with excellent stability. V-memory Corp. has original technology with more than 30 patents. We pursue a global semiconductor company through outstanding semiconductor technology.
We promise to do our best to become a world-class semiconductor company through constant change and growth.
V-memory CEO J. S. Rhyee
2020 13 patent applications and 3 registrations applications
Jan Moved in Heungdeok IT Valley 605 Office
2019 14 patent applications and 4 registrations, 3 PCT international applications
Jul Establishment of company-affiliated research institute
Jun 2019 Research Foundation Utilization Project PRJ (Research Intensive), Initial Startup Package PRJ
May Excellent Technology Evaluation Company Certification (T-5),
Acquired Technology Guarantee Fund U-Tech Guarantee
Mar Korea Nano Technology Institute-Moved the location of corporation
Fab Venture Business Certification
Jan private investment from University of Ulsan U2A No. 2
2018 10 patent applications
Sep Actner Lab investment
Jul Establishment of V-memory Corp.