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Next-generation memory 1 million times faster than flash memory !
Next-generation flash memory

Conventional flash memory technology has shown the limitations of integration due to the recent miniaturization and high integration, with the disadvantage of slow speed and short life. As 5G technology has been commercialized since 2019, the memory speed of mobile devices is urgently required.

V-memory technology not only overcomes the problems of next-generation nonvolatile memory technologies, but also provides technologies that can raise the limit of integration of existing flash memory process technology.

CEO MASSAGE

Recently, the research on the next generation semiconductor is intensifying globally due to facing with the scaling limitation of semiconductor integration. The future technology requires enormous data storage and high processing speed because the artificial intelligence (AI), Big data, and Internet of Things (IoT) are essential in the 4th industrial revolution period. Therefore, the next-generation semiconductor needs higher speed, higher integration, and excellent stability than those of conventional semiconductors.

V-memory Co. Ltd. is a start-up company from a University Lab. in 2018 to commercialize the next-generation memory devices that can overcome the current limitation of semiconductor technologies and can deal with future technological needs. The proposed semiconductor of V-memory has a higher speed as much as 1 Million times than current semiconductors with excellent stability. V-memory Co. Ltd. has original technology with more than 30 patents. We pursue a global semiconductor company through outstanding semiconductor technology.

We promise to do our best to become a world-class semiconductor company through constant change and growth.

 

V-memory CEO  J. S. Rhyee

HISTORY

Jan   Moved in Heungdeok IT Valley 605 Office

2019 14 patent applications and 4 registrations, 3 PCT international applications

Jul   Establishment of company-affiliated research institute

Jun   2019 Research Foundation Utilization Project PRJ (Research Intensive), Initial Startup Package PRJ

May   Excellent Technology Evaluation Company Certification (T-5),

           Acquired Technology Guarantee Fund U-Tech Guarantee

Mar   Korea Nano Technology Institute-Moved the location of corporation

Fab   Venture Business Certification

Jan   private investment from University of Ulsan U2A No. 2

2018 10 patent applications

Sep   Actner Lab investment

Jul   Establishment of V-memory Co., Ltd

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